Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10854-023-11077-3.pdf
Reference30 articles.
1. P. Divya, A. Kumar, W.H. Lee, Effects of SiNX passivation on GaN-HEMT DC characteristics. Mater. Sci. Semiconduct. Process. 148, 106716 (2022)
2. J. Zhang et al., Ultralow-contact-resistance Au-free ohmic contacts with low annealing temperature on AlGaN/GaN heterostructures. IEEE Electron. Device Lett. 39(6), 847–850 (2018)
3. H. Sun et al., Optimization of Au-free ohmic contact based on the gate-first double-metal AlGaN/GaN MIS-HEMTs and SBDs process. IEEE Trans. Electron. Devices. 65(2), 622–628 (2017)
4. T. Aggerstam, S. Lourdudoss, H.H. Radamson, M. Sjödin, P. Lorenzini, D.C. Look, Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire. Thin Solid Films. 515, 705–707 (2006)
5. Y,-Y. Wong et al. Growth and fabrication of AlGaN/GaN HEMT on SiC substrate.10th IEEE international conference on semiconductor electronics (ICSE) (2012) 729–732
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