Ferroelectricity and reliability performance of HfZrO films by N-plasma treatment on TiN electrode-Reference-Cited by-同舟云学术

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Ferroelectricity and reliability performance of HfZrO films by N-plasma treatment on TiN electrode

Published:2022-09-19 Issue:30 Volume:33 Page:23341-23350
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Li Yue,Feng Tianyang,Sun Tangyou,Chen Yonghe,Zhang Fabi,Fu Tao,Wangyang Peihua,Li Haiou,Liu Xingpeng^ORCID

Funder

National Nature Science Foundation of China

Guangxi Innovation Research Team Project

Guangxi Science and Technology Planning Project

Opening Foundation of the State Key Laboratory of Advanced Materials and Electronic Components

Guilin University of Electronic Technology

GUET Excellent Graduate Thesis

State Key Laboratory of ASIC & System

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10854-022-09096-7.pdf

Reference35 articles.

1. A. Sharma, K. Roy, 1T Non-volatile memory design using sub-10nm ferroelectric FETs. IEEE Electron Device Lett. 39, 359–362 (2018). https://doi.org/10.1109/LED.2018.2797887

2. J. Li, J.R. Zhou, G.Q. Han, Y. Liu, Y. Peng, J.C. Zhang, Q.Q. Sun, D.W. Zhang, Y. Hao, Negative capacitance ge PFETs for performance improvement: impact of thickness of HfZrOx. IEEE Trans. Electron Devices 65, 1217–1222 (2018). https://doi.org/10.1109/TED.2018.2791420

3. J. Li, B. Nagaraj, H. Liang, W. Cao, C.H. Lee, R. Ramesh, Ultrafast polarization switching in thin-film ferroelectrics. Appl. Phys. Lett. 84, 1174–1176 (2004). https://doi.org/10.1063/1.1644917

4. H. Chen, L. Tang, L. Liu, Y. Chen, H. Luo, X. Yuan, D. Zhang, Significant improvement of ferroelectricity and reliability in Hf0.5Zr0.5O2 films by inserting an ultrathin Al2O3 buffer layer. Appl. Surf. Sci. 542, 148737 (2021). https://doi.org/10.1016/j.apsusc.2020.148737

5. Z. Zheng, R. Cheng, Y. Qu, X. Yu, W. Liu, Z. Chen, B. Chen, Q. Sun, D.W. Zhang, Y. Zhao, Real-time polarization switch characterization of Hfzro4 for negative capacitance field-effect transistor applications. IEEE Electron Device Lett. 39, 1469–1472 (2018). https://doi.org/10.1109/LED.2018.2861729

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1. Interpretable structure-property correlation in X-ray diffraction patterns of HfZrO thin films via machine learning;Japanese Journal of Applied Physics;2024-04-01

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