n-Type naphthalimide-indole derivative for electronic applications

Abstract

AbstractThe fabrication of diodes using organic semiconductors as active materials has gained wide interest, and has undergone significant progress in the past few decades. A naphthalimide-indole derivative (BNIA) was synthesized through bromination of acenaphthene, subsequent oxidation, and finally imidation with indole-3-acetic anhydride. The molecular structure was characterized using NMR and IR spectroscopy. The BNIA displayed good thermal stability up to 300 °C and an electrochemical band gap of 1.07 eV. The theoretical studies were performed to support the experimental findings. The electrical parameter values and the dielectric measurement studies directed towards the suitability of BNIA as a functional material in electronic devices. A diode was successfully constructed using BNIA as the n-type material with an ideality factor of 8.13, and the electrical parameters are analyzed.