Photosensitive iron–aluminum oxide gas sensor

Abstract

AbstractIn this study, the structural, topographic, and optical properties of iron–aluminum oxide (AlxFe2−xO3, 1 > x > 0) thin film grown by co-sputtering method were investigated. Firstly, AlxFe2−xO3 films grown by magnetron RF–DC co-sputtering method were annealed at 540 °C and then XRD analyses were performed. The absorption measurement, Raman shift, XPS, gas sensor measurements, and SEM images were taken, respectively. The band gap energy of the AlxFe2−xO3 samples was obtained and measured as approximately 2.41 eV, and different peaks at various intensities were seen in the XRD analysis. According to the XRD analysis of the AlxFe2−xO3 semiconductor, the peaks occurred at 33.42°, 41.16°, and 54.43° and the XRD analysis results show that the structure is polycrystalline. As seen in the measurement of the AlxFe2−xO3 gas sensors, acoustic gas sensorsgas sensor, the current value increased with the flow of hydrogen gas. This means that the oxygen that hydrogen detached from the thin film surface contributes to the conductivity of the remaining electrons in the structure, which means that the thin film was an n-type semiconductor. It was seen that the AlxFe2−xO3 gas sensor was very sensitive to light. During the feature measurement, it was seen that the current value measured under the light increases considerably.