The volt-ampere characteristic of a metal-semiconductor junction of small area, with the assumptions of diffusion theory-Reference-Cited by-同舟云学术

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The volt-ampere characteristic of a metal-semiconductor junction of small area, with the assumptions of diffusion theory

Published:1967-07 Issue:7 Volume:10 Page:1-5
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Strikha V. I.,Sheka D. I.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00819740.pdf

Reference16 articles.

1. Crystal Detectors, Parts I and II [in Russian], Sovetskoe radio, 1950.

2. S. I. Ivanov, N. A. Penin, N. E. Skvortsova, and Yu. F. Sokolov, Physical Foundations of the Working of SHF Diodes [in Russian], Sovetskoe radio, 1965.

3. J. Bardeen, Bell. Syst. Tech. J.,29, 469, 1950.

4. P. G. Banbury, Proc. Phys. Soc.,66B, 833, 1953.

5. M. Cutler, Phys. Rev.,96, 255, 1954.

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