Novel fully self-aligned MESFET using source and drain regrown nonalloyed contacts by ALE-Reference-Cited by-同舟云学术

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Novel fully self-aligned MESFET using source and drain regrown nonalloyed contacts by ALE

Published:1993-02 Issue:2 Volume:22 Page:179-183
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Hashemi M. M.,Najjar F. E.,McDermott B.,Hills J. S.,Maynard L.,Mishra U. K.,Hauser J. R.,Bedair S. M.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02665024.pdf

Reference11 articles.

1. N. Yokoyama, T. Mimura, M. Fukuta and Hishikawa, Int. Solid-State Circuits Conf.,Dig. Tech. Papers 218 (1981).

2. K. Yamasaki, K. Asai, T. Mizutani and K. Kurumada,Electron. Lett. 18, 119 (1982).

3. T. Terada, Y. Kitaura, T. Mizoguchi, M. Mochizuki, N. Toyoda and A. Hojo, GaAs IC Symp., (1983).

4. A. Higashisaka, M. Ishikawa, F. Katano, S. Asai, T. Furutsuka,and Y. Takayama,15th Conf. on Solid-State Dev. and Mater. 69(1983).

5. K. Uetake, F. Katano, M. Kamiya, T. Misaki and A. Higashisaka,12th Int. Symp. on GaAs and Related Compounds, 505 (1985).

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1. Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors;Journal of The Electrochemical Society;2008

2. Pulsed-jet epitaxy: Application to device processes;Applied Surface Science;1994-12

3. Recent advances in atomic layer epitaxy devices;Applied Surface Science;1994-12

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