Nanometer-sized patterning of polysilicon thin films by high density plasma etching using Cl2 and hbr gases
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Chemical Engineering,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/BF02706950.pdf
Reference11 articles.
1. Chung, C. W., Byun, Y. H. and Kim, H. I., “Inductively Coupled Plasma Etching of Pb(ZrxTi1-x)O3 Thin Films in Cl2C2F6/Ar and HBr/Ar Plasmas,”Korean J. Chem. Eng.,19, 524 (2002).
2. Desvoivres, L., Vallier, L. and Joubert, O., “Sub-0.1 um Gate Etch Processes: Towards Some Limitations of the Plasma Technology?”J. Vac. Sci. Technol.,B 18,156 (2000).
3. French, M. L. and White, M. H., “Scaling of Multidielectric Nonvolatile SONOS Memory Structures,”Solid-State Electron.,37, 1913 (1995).
4. Gaboriau, F, Peignon, M. C., Barreau, A., Turban, G., Cardinaud, C., Pfeiffer, K., Bleidiebel, G. and Grutzner, G., “High Density Fluorocarbon Plasma Etching of New Resists Suitable for Nano-imprint Lithography,”Microelectronic Eng.,53, 501 (2000).
5. Gadgil, P. K., Dane, D. and Mantei, T. D., “Anisotropic Highly Selective Electron Cyclotorn Resonance Plasma Etching of Polysilicon,”J. Vac. Sci. Technol.,A 10, 1303 (1992).
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma;Japanese Journal of Applied Physics;2013-11-01
2. Film properties of nitrogen-doped polycrystalline silicon for advanced gate material;Korean Journal of Chemical Engineering;2009-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3