Radiation damage and annealing behaviour in Be+-implanted pure Ga(Al)Sb layers-Reference-Cited by-同舟云学术

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Radiation damage and annealing behaviour in Be+-implanted pure Ga(Al)Sb layers

Published:1991-08 Issue:8 Volume:20 Page:517-522
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

PéRotin M.,Sabir A.,Gouskov L.,Luquet H.,Pérez A.,Canut B.,Lambert B.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02666011.pdf

Reference23 articles.

1. H. Luquet, M. Pérotin, L. Gouskov, C. Llinares, H. Archidi, M. Lahbabi, M. Karim, and B. Mbow, J. Appl. Phys.69, 3861(1990).

2. O. Hildebrand, W. Kuebart, K. W. Benz and M. H. Pilkuhn J. Quant. Electron17, 284 (1981).

3. M. Z. Kinghavev, V. I. Korolkov, M. P. Mikhailova, W. V. Sazanov, and D. N. Tret'Yakov, Sov. Phys. Solid State14, 801 (1980).

4. T. Milkawa, S. Miuva, H. Kuswatsuka, N. Yasuoka, T. Tanahashi and O. Wada, Proc. IEDM San Francisco, IEEE Cat-alog Nb88, 2528 (1988).

5. M. Pérotin, H. Luquet, L. Gouskov, P. Abdiale Abi, H. Archidi, M. Lahbadi, M. Mbow and A. Pérez, 19th EuropeanSolid State Dev. Res. Conf. Berlin Springer Verlag 393 (1989).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Secondary ion mass spectrometry generates swelling of GaSb: Depth resolution and secondary ion yields;Journal of Applied Physics;1993-03

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