Quantum Dot Gate NMOS Inverter
Reference14 articles.
1. Kruppa, W., Boos, J. B.: Observation of DC and microwave negative differential resistance in InAlAs/InGaAS/InP HEMTs. Electron. Lett. 38(3), 267–269 (1992) 2. Chumbes, E.M., Schremer, A.T., Smart, J.A., Wang, Y., MacDonald, N.C., Hogue, D., Komiak, J.J., Lichwalla, S.J., Leoni, R.E., Shealy, J.R.: AlGaN/GaN high electron mobility transistors on Si(111) substrates. IEEE Trans. Electron Devices 48(3), 420–425 (2001) 3. Jain, F.C., Suarez, E., Gogna, M., AlAmoody, F., Butkiewicus, D., Hohner, R., Liaskas, T., Karmakar, S., Chan, P.Y., Miller, B., Chandy, J., Heller, E.: Novel quantum dot gate FETs and nonvolatile memories using lattice-matched II–VI gate insulators. J. Electron. Mater. 38(8), 1574–1578 (2009) 4. Karmakar, S., Gogna, M., Suarez, E., Alamoody, F., Heller, E., Chandy, J., Jain, F.: 3-state behavior of quantum dot gate FETs with lattice matched insulator. In: Proceedings of 2009 Nanoelectronic Devices for Defense and Security, Fort Lauderdale, Florida, USA, Sept 2009 5. Jain, F., Karmakar, S., Alamoody, F., Suarez, E., Gogna, M., Chan, P.-Y., Chandy, J., Miller, B., Heller, E.: 3-state behavior in quantum dot gate InGaAs FETs. In: Proceedings of International Semiconductor Device Research Symposium, College Park, MD, USA, Dec 2009
|
|