Enactment of FinFET Based SRAM with Low Power, Noise and Data Retention at 45 nm Technology

Author:

Sable Varun,Akashe Shyam

Publisher

Springer India

Reference21 articles.

1. Akashe S, Bhushan S, Sharma S (2012) High density and low leakage current based 5T SRAM cell using 45 nm technology. Rom J Inf Sci Technol 15(2):155–168

2. Akashe S, Sharma S (2013) Design trade-offs for nanoscale process and material parameters on 7T SRAM cell. J Comput Theor Nanosci 10(5):1244–1247

3. Wu JJ (2010) A large σ VTH/VDD tolerant zigzag 8T SRAM with area-efficient decoupled differential sensing and fast write-back scheme. IEEE symposium on VLSI circuits, 103–104

4. Khandelwal S, Akashe S (2012) Supply voltage minimization techniques for SRAM leakage reduction. J Comput Theor Nanosci 9(8):1044–1048

5. Yeoh YN, Wang B, Yu X, Kim TT (2013) A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches. IEEE international symposium on circuits and systems, pp 3030–3033

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