Effect of hydrostatic pressure on VA-characteristics of amorphous semiconductors Ge15Te81S2As2
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/BF01699493.pdf
Reference7 articles.
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5. Ovshinsky S. R.: Phys. Rev. Letters21 (1968), 1450.
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of pressure on turnover behaviour inI–V characteristic curves in GeTeSe chalcogenide glass;Il Nuovo Cimento D;1995-10
2. High-pressure effects on electrical switching in As50Te45I5 semiconducting glass;Journal of Non-Crystalline Solids;1978-06
3. Study op electrical conductivity op some chalkogenide glasses under hydrostatic pressure up to 1000 MPa;Czechoslovak Journal of Physics;1975-11
4. A contribution to the explanation of the electronic spectrum of amorphous materials;Czechoslovak Journal of Physics;1974-10
5. Dependence of V-A characteristics of amorphous semiconductor Ge15Te81S2As2 on hydrostatic pressure;Czechoslovak Journal of Physics;1973-04
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