Study on the synergistic effect and mechanism of inhibitors benzotriazole and pyrazole on copper surface-Reference-Cited by-同舟云学术

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Study on the synergistic effect and mechanism of inhibitors benzotriazole and pyrazole on copper surface

Published:2023-04-08 Issue:8 Volume:53 Page:1669-1685
ISSN:0021-891X
Container-title:Journal of Applied Electrochemistry
language:en
Short-container-title:J Appl Electrochem

Author:

Wang Jing,Gao Baohong,Liu Shitong,Liang Bin,Liu Mingyu

Funder

the National Natural Science Foundation of China

the Natural Science Foundation of Hebei Province

the major National Science and Technology Special Projects

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrochemistry,General Chemical Engineering

Link

https://link.springer.com/content/pdf/10.1007/s10800-023-01874-3.pdf

Reference50 articles.

1. Zhan K, Niu XH, Wang CW, Yin D, Wang R (2018) Effect of chelating agent and ammonium dodecyl sulfate on the interfacial behavior of copper CMP for GLSI. ECS J Solid State Sci 7:509–517. https://doi.org/10.1149/2.0231809jss

2. Lee H, Jeong H (2011) A wafer-scale material removal rate profile model for copper chemical mechanical planarization. Int J Mach Tool Manu 51:395–403. https://doi.org/10.1016/j.ijmachtools.2011.01.007

3. Lai SM, Chen YY, Liu CP, Hsieh CK, Lin JY (2018) Degradation of inhibitor in alkaline cleaning solution for post-Cu CMP cleaning. Surf Coat Technol 350:1080–1084. https://doi.org/10.1016/j.surfcoat.2018.02.039

4. Jiang L, Lan YQ, He YY, Li YZ, Luo JB (2013) Functions of Trilon® P as a polyamine in copper chemical mechanical polishing. Appl Surf Sci 288:265–274. https://doi.org/10.1016/j.apsusc.2013.10.020

5. Zantye P, Kumar A, Sikder AK (2004) Chemical mechanical planarization for microelectronics applications. Mat Sci Eng R 45(3–6):89–220. https://doi.org/10.1016/j.mser.2004.06.002

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