Selection of an oxidant for copper chemical mechanical polishing: Copper-iodate system
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrochemistry,General Chemical Engineering
Link
http://link.springer.com/content/pdf/10.1007/s10800-004-1763-4.pdf
Reference27 articles.
1. Copper CMP
2. Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects
3. A Two‐Dimensional Process Model for Chemimechanical Polish Planarization
4. Feature‐Scale Fluid‐Based Erosion Modeling for Chemical‐Mechanical Polishing
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1. Growth of Copper Iodate Crystal in Gel and its Characterisations;International Journal of Scientific Research in Science and Technology;2021-02-01
2. Kinetic identification of three metal ions by using a Briggs-Rauscher oscillating system;Microchemical Journal;2021-01
3. Material Removal Mechanism of Cu in KIO4-Based Slurry;Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect;2017-09-09
4. Experimental considerations for using electrochemical impedance spectroscopy to study chemical mechanical planarization systems;Electrochimica Acta;2017-01
5. Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry;Applied Surface Science;2015-05
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