Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier

Author:

Chai Chun-Yi,Huang Jung-A,Lai Yong-Lin,Wu Janne-Wha,Chang Chun-Yen,Chan YI-Jen,Cheng Huang-Chung

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. The influence of surface cleaning on the stability of Pd/GaAs contacts;Journal of Materials Science: Materials in Electronics;2001

2. The thermal stability of laser annealed contacts based on palladium;Microelectronic Engineering;2000-12

3. W/Pt/Ge/Pd contact optimization for the measurement of GaAs quantum structures;ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

4. The behaviour of Sn/Pd/n-GaAs metallization under thermal treatment;2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567)

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