Author:
Lai Wen-Cheng,Jang Sheng-Lyang
Abstract
An X-band GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback network with
four-path inductors. With the supply voltage of VDD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is 124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm2.
Subject
Electrical and Electronic Engineering,Astronomy and Astrophysics
Cited by
35 articles.
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