Non-quasi-static Effects Simulation of Microwave Circuits based on Physical Model of Semiconductor Devices

Abstract

This work explores analyzing the non-quasistatic effects of a microwave circuit by employing a physical model-based field-circuit co-simulation method. Specifically, it uses the semiconductor physical model to characterize the semiconductor devices, and simulates the lumped circuit by cooperating semiconductor physical equations into Kirchhoff’s circuit equations. Then the lumped circuit simulation is hybridized with the finite-difference time-domain (FDTD) simulation by interfacing EM (electromagnetic) field quantities with lumped-element quantities at each timestep. Taken a microwave limiter circuit as an example, the simulation results agree well with the measured results, which prove that this method can characterize non-quasi-static effects well. As a comparison, the equivalent circuit modelbased co-simulation cannot characterize the non-quasistatic effects accurately.