Crystalline Characterization of TlBr Semiconductor Detectors Using Wavelength-resolved Neutron Imaging
Author:
Publisher
MYU K.K.
Subject
General Materials Science,Instrumentation
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison between carrier transport property and crystal quality of TlBr semiconductors;2024-09-10
2. The use of time-of-flight neutron Bragg edge imaging to measure the residual strains in W/Cu dissimilar joints for fusion reactors;Nuclear Materials and Energy;2024-03
3. Comparison Between Neutron Bragg Dip and Electron Backscatter Diffraction Images of TlBr Semiconductors;Sensors and Materials;2024-01-26
4. Development of Time-of-flight Measurement System for Carrier Transport Characterization of TlBr Semiconductor Detectors;Sensors and Materials;2024-01-26
5. Crystal quality evaluation of a large TlBr crystal using neutron Bragg-dip imaging;2023 IEEE Nuclear Science Symposium, Medical Imaging Conference and International Symposium on Room-Temperature Semiconductor Detectors (NSS MIC RTSD);2023-11-04
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