1 The driving force for development of IC and system in future: Reducing the power consumption and imp..
来源:SCI CHINA INFORM SCI( P 1674-733X E 1869-1919 ) 发表时间: 2011/05
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2 Analog/RF performance of Si nanowire MOSFETs and the impact of process variation
来源:IEEE T ELECTRON DEV( P 0018-9383 E 1557-9646 ) 发表时间: 2007/06
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3 An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs
来源:IEEE T ELECTRON DEV( P 0018-9383 E 1557-9646 ) 发表时间: 2014/08
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4 A 0.4-V low noise amplifier using forward body bias technology for 5 GHz application
来源:IEEE MICROW WIREL CO( P 1531-1309 E 1558-1764 ) 发表时间: 2007/07
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5 Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs
来源:IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2009/01
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6 Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps
来源:IEEE T CIRCUITS-I( P 1549-8328 E 1558-0806 ) 发表时间: 2013/01
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7 Unipolar TaOx-Based Resistive Change Memory Realized With Electrode Engineering
来源:IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2010/09
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8 Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency an..
来源:IEEE T ELECTRON DEV( P 0018-9383 E 1557-9646 ) 发表时间: 2008/11
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9 A Single-Chip CMOS UHF RFID Reader Transceiver for Chinese Mobile Applications
来源:IEEE J SOLID-ST CIRC( P 0018-9200 E ) 发表时间: 2010/07
类型:期刊论文 为本人加分:948.688215
10 A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs
来源:SOLID STATE ELECTRON( P 0038-1101 E 1879-2405 ) 发表时间: 2006/03
类型:期刊论文 为本人加分:926.323758