1 Unipolar TaOx-Based Resistive Change Memory Realized With Electrode Engineering
来源:IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2010/09
类型:期刊论文 为本人加分:5300.569467
2 Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology
来源:IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2009/08
类型:期刊论文 为本人加分:2736.306023
3 Experimental investigation of the reliability issue of RRAM based on high resistance state conductio..
来源:NANOTECHNOLOGY( P 0957-4484 E 1361-6528 ) 发表时间: 2011/06
类型:期刊论文 为本人加分:2280.465992
4 Total Ionizing Dose (TID) Effects on TaOx-Based Resistance Change Memory
来源:IEEE T ELECTRON DEV( P 0018-9383 E 1557-9646 ) 发表时间: 2011/08
类型:期刊论文 为本人加分:1572.114820
5 Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D s..
来源:APPL PHYS A-MATER( P 0947-8396 E 1432-0630 ) 发表时间: 2011/03
类型:期刊论文 为本人加分:665.646612
6 A Novel RF LDMOS Fabricated With Standard Foundry Technology
来源:IEEE ELECTR DEVICE L( P 0741-3106 E 1558-0563 ) 发表时间: 2009/04
类型:期刊论文 为本人加分:512.335687
7 Flexible Single-Component-Polymer Resistive Memory for Ultrafast and Highly Compatible Nonvolatile M..
来源:IEEE ELECTR DEVICE L( P 0741-3106 E ) 发表时间: 2010/07
类型:期刊论文 为本人加分:449.565140
8 Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for ..
来源:IEEE T ELECTRON DEV( P 0018-9383 E ) 发表时间: 2012/12
类型:期刊论文 为本人加分:216.190232
9 A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application
来源:IEEE T ELECTRON DEV( P 0018-9383 E 1557-9646 ) 发表时间: 2012/08
类型:期刊论文 为本人加分:16.610085
10 Resistance switching for RRAM applications
来源:SCI CHINA INFORM SCI( P 1674-733X E 1869-1919 ) 发表时间: 2011/05
类型:期刊论文 为本人加分:9.250313