1 Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors
来源:NAT COMMUN( P 2041-1723 E ) 发表时间: 2015/05
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2 Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure
来源:NANO LETT( P 1530-6984 E 1530-6992 ) 发表时间: 2016/04
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3 Excitonic topological order in imbalanced electron-hole bilayers
来源:NATURE( P 0028-0836 E 1476-4687 ) 发表时间: 2023/07
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贡献度:共同通讯作者
4 High Responsivity Phototransistors Based on Few-Layer ReS2 for Weak Signal Detection
来源:ADV FUNCT MATER( P 1616-301X E 1616-3028 ) 发表时间: 2016/03
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5 Band Structure Perfection and Superconductivity in Type-II Dirac Semimetal Ir1-xPtxTe2
来源:ADV MATER( P 0935-9648 E 1521-4095 ) 发表时间: 2018/08
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6 Nontrivial Berry phase and type-II Dirac transport in the layered material PdTe2
来源:PHYS REV B( P 2469-9950 E 2469-9969 ) 发表时间: 2017/07
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7 Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2
来源:NAT COMMUN( P 2041-1723 E ) 发表时间: 2016/10
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8 Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes
来源:NAT COMMUN( P 2041-1723 E ) 发表时间: 2019/10
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9 A Gd@C-82 single-molecule electret
来源:NAT NANOTECHNOL( P 1748-3387 E 1748-3395 ) 发表时间: 2020/12
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10 Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrins..
来源:NANO LETT( P 1530-6984 E 1530-6992 ) 发表时间: 2020/01
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