Coupling of Buoyant Convections in Boron Oxide and a Molten Semiconductor in a Vertical Magnetic Field
Author:
Farrell Martin V.1, Ma Nancy1
Affiliation:
1. Department of Mechanical and Aerospace Engineering, North Carolina State University, Campus Box 7910, Raleigh, NC 27695
Abstract
This paper treats the buoyant convection in a layer of boron oxide, called a liquid encapsulant, which lies above a layer of a molten compound semiconductor (melt) between cold and hot vertical walls in a rectangular container with a steady vertical magnetic field B. The magnetic field provides an electromagnetic (EM) damping of the molten semiconductor which is an excellent electrical conductor but has no direct effect on the motion of the liquid encapsulant. The temperature gradient drives counter clockwise circulations in both the melt and encapsulant. These circulations alone would lead to positive and negative values of the horizontal velocity in the encapsulant and melt, respectively, near the interface. The competition between the two buoyant convections determines the direction of the horizontal velocity of the interface. For B=5 T, there is significant EM damping of the melt motion and the encapsulant drives a positive interfacial velocity and a small clockwise circulation in the melt. For a much weaker field B=0.1 T, the maximum velocity in the melt is hundreds of times larger than that of the encapsulant, thus causing nearly all the encapsulant to circulate in the clockwise direction.
Publisher
ASME International
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Hurle, D. T. J., and Series, R. W., 1994, “Use of a Magnetic Field in Melt Growth,” Hanb Cryst Growth, D. T. J. Hurle, ed., Elsevier Science Publishers, 2A, pp. 261–285. 2. Walker, J. S., 1999, “Models of Melt Motion, Heat Transfer, and Mass Transport During Crystal Growth With Strong Magnetic Fields,” The Role of Magnetic Fields in Crystal Growth, in Prog Cryst Growth Charact Mater, K. W. Benz, ed., Elsevier Science Publishers, 38, pp. 195–213. 3. Walker, J. S., and Ma, N., 2002, “Convective Mass Transport During Bulk Growth of Semiconductor Crystals With Steady Magnetic Fields,” Annu Rev Heat Transfer, Chang-Lin Tien, Vishwanath Prasad, and Frank Incropera, eds., Begell House, New York, 12, pp. 223–263. 4. Bliss, D. F., Hilton, R. M., and Adamski, J. A., 1993, “MLEK Crystal Growth of Large Diameter (100) Indium Phosphide,” J. Cryst. Growth, 128, pp. 451–456. 5. Bliss, D. F., Hilton, R. M., Bachowski, S., and Adamski, J. A., 1991, “MLEK Crystal Growth of (100) Indium Phosphide,” J. Electron. Mater., 20, pp. 967–971.
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