Study on Site-Selective Growth of Carbon Nanotubes and Diamond Films With Barrier Layers

Abstract

Microwave plasma jet chemical vapor deposition is used to grow array types of carbon nanotubes and diamond films on silicon substrates. In this study, we report a patterned growth of carbon nanotubes and diamond films using the barrier layer method, wherein the selective areas vary from 20×20 μm2 to 30×80 μm2. The field-emission measurement shows that the turn-on electric field for patterned carbon nanotubes and diamond films are 1.1 V/μm and 5 V/μm, respectively. Therefore, this method of site-selective growth of carbon nanotubes and diamond films can be applied to the production of field emitters.