Hybrid Semiconductor Wafer Inspection Framework via Autonomous Data Annotation

Author:

Han Changheon1,Chun Heebum2,Lee Jiho31,Zhou Fengfeng1,Yun Huitaek4,Lee ChaBum2,Jun Martin B.G.1

Affiliation:

1. Purdue University School of Mechanical Engineering, , 585 Purdue Mall, West Lafayette, IN 47907

2. Texas A&M University J. Mike Walker ‘66 Department of Mechanical Engineering, , 3123 TAMU, College Station, TX 77843

3. Purdue University System School of Mechanical Engineering, , 585 Purdue Mall, West Lafayette, IN 47907

4. Korea Advanced Institute of Science and Technology (KAIST) Department of Mechanical Engineering, , 291 Daehak-ro, Yuseong-gu, Daejeon 34141 , South Korea

Abstract

Abstract In smart manufacturing, semiconductors play an indispensable role in collecting, processing, and analyzing data, ultimately enabling more agile and productive operations. Given the foundational importance of wafers, the purity of a wafer is essential to maintain the integrity of the overall semiconductor fabrication. This study proposes a novel automated visual inspection (AVI) framework for scrutinizing semiconductor wafers from scratch, capable of identifying defective wafers and pinpointing the location of defects through autonomous data annotation. Initially, this proposed methodology leveraged a texture analysis method known as gray-level co-occurrence matrix (GLCM) that categorized wafer images—captured via a stroboscopic imaging system—into distinct scenarios for high- and low-resolution wafer images. GLCM approaches further allowed for a complete separation of low-resolution wafer images into defective and normal wafer images, as well as the extraction of defect images from defective low-resolution wafer images, which were used for training a convolutional neural network (CNN) model. Consequently, the CNN model excelled in localizing defects on defective low-resolution wafer images, achieving an F1 score—the harmonic mean of precision and recall metrics—exceeding 90.1%. In high-resolution wafer images, a background subtraction technique represented defects as clusters of white points. The quantity of these white points determined the defectiveness and pinpointed locations of defects on high-resolution wafer images. Lastly, the CNN implementation further enhanced performance, robustness, and consistency irrespective of variations in the ratio of white point clusters. This technique demonstrated accuracy in localizing defects on high-resolution wafer images, yielding an F1 score greater than 99.3%.

Funder

National Science Foundation

Publisher

ASME International

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