Radiative Properties of Semitransparent Silicon Wafers With Rough Surfaces
Author:
Affiliation:
1. Department of Mechanical Engineering, University of Florida, Gainesville, FL 32611
2. George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332
Abstract
Publisher
ASME International
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
http://asmedigitalcollection.asme.org/heattransfer/article-pdf/125/3/462/5505850/462_1.pdf
Reference39 articles.
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2. Sato, T. , 1967, “Spectral Emissivity of Silicon,” Jpn. J. Appl. Phys., 6, pp. 339–347.
3. Vandenabeele, P., and Maex, K., 1992, “Influence of Temperature and Backside Roughness on the Emissivity of Si Wafers during Rapid Thermal Processing,” J. Appl. Phys., 72(12), pp. 5867–5875.
4. Abedrabbo, S., Hensel, J. C., Fiory, A. T., Sopori, B., Chen, W., and Ravindra, N. M., 1998, “Perspectives on Emissivity Measurements and Modeling in Silicon,” Materials Science in Semiconductor Processing 1, pp. 187–193.
5. Drolen, B. L. , 1992, “Bidirectional Reflectance and Secularity of Twelve Spacecraft Thermal Control Materials,” J. Thermophys. Heat Transfer, 6(4), pp. 672–679.
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