Affiliation:
1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
Abstract
Abstract
The blocking voltage level of silicon carbide (SiC) can reach 10–25 kV, which will significantly increase the power density and capacity of power modules. However, high voltage can induce a high electric field, increase the risk of partial discharge (PD), and threaten the insulation reliability. This paper focuses on the triple points between the metal electrode, silicone gel, and ceramic in power modules. The influencing factors of the electric field at different triple points are fully analyzed. PD experiments are performed and the results show that the interface between silicone gel and ceramic is a weak area of insulation. Therefore, this paper demonstrates that area of weak insulation and high electric field meet at the triple point. To solve this problem, a new structure of the ceramic substrate is proposed, which isolates the interface area from the high electric field. At the same time, the new structure can significantly reduce the high electric field reinforcement.
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Review of Thermal Packaging Technologies for Automotive Power Electronics for Traction Purposes;ASME J. Electron. Packag.
2. Application of Wide Bandgap Devices in Renewable Energy Systems - Benefits and Challenges;ICRERA,2014
3. SiC Device and Power Module Technologies for Environmentally Friendly Vehicles,2012
4. 10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field;IEEE Trans. Power Electron.,2020
5. Technology Trends Toward a System-in-a-Module in Power Electronics;IEEE Circuits Syst. Mag.,2002
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献