Spray Cooling of IGBT Devices

Author:

Mertens Robert G.1,Chow Louis2,Sundaram Kalpathy B.2,Cregger R. Brian2,Rini Daniel P.3,Turek Louis3,Saarloos Benjamin A.3

Affiliation:

1. GammaPC, 2813 Kilgore Street, Orlando, FL 32803-6436

2. College of Engineering and Computer Science, University of Central Florida, Orlando, FL 32816

3. Rini Technologies, Inc., 582 South Econ Circle, Oviedo, FL 32765

Abstract

The popularity and increased usage of insulated gate bipolar transistors (IGBTs) in power control systems have made the problem of cooling them a subject of considerable interest in recent years. In this investigation, a heat flux of 825W∕cm2 at the die was achieved when air-water spray cooling was used to cool IGBTs at high current levels. The junction temperature of the device was measured accurately through voltage-to-temperature characterization. Results from other cooling technologies and other spray cooling experiments were reviewed. A discussion of electrical power losses in IGBTs, due to switching and conduction, is included in this paper. Experiments were conducted on 19 IGBTs, using data collection and software control of the test set. Three types of cooling were explored in this investigation: single-phase convection with water, spray cooling with air-water and spray cooling with steam-water. The results of these experiments show clear advantages of air-water spray cooling IGBTs over other cooling technologies. The applications of spray cooling IGBTs are discussed in open (fixed) and closed (mobile) systems. Current and heat flux levels achieved during this investigation could not have been done using ordinary cooling methods. The techniques used in this investigation clearly demonstrate the superior cooling performance of air-water spray cooling over traditional cooling methods.

Publisher

ASME International

Subject

Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Oh, K. S. , 2001, “Application Note 9016, IGBT Basics I,” Application Note, Fairchild Semiconductor Corp., South Portland, ME, February.

2. Um, K. J. , 2001, “Application Note 9020, IGBT Basics II,” Application Note, Fairchild Semiconductor Corp., South Portland, ME, February.

3. IGBT Module Setup With Integrated Micro-Heat Sinks;Steiner

4. Integrated Micro Heat Sink for Power Multichip Module;Gillot;IEEE Trans. Ind. Appl.

5. On the Use of Flat Heat Pipes as Thermal Spreaders in Power Electronics Cooling;Avenas

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