Packaging Induced Die Stresses—Effect of Chip Anisotropy and Time-Dependent Behavior of a Molding Compound

Author:

van Driel W. D.1,Janssen J. H. J.1,Zhang G. Q.2,Yang D. G.3,Ernst L. J.3

Affiliation:

1. Philips Semiconductors, ATO Innovation, P.O. Box 30008, 6534 AE Nijmegen, The Netherlands

2. Philips CFT, P.O. Box 218, 5600 MD Eindhoven, The Netherlands

3. Delft University of Technology, P.O. Box 5033, 2600 GA Delft, The Netherlands

Abstract

This paper investigates the effect of the anisotropic behavior of the die and the time- and temperature-dependent behavior of epoxy molding compound on the packaging induced stresses for a quad flat package. Finite element (FE) simulations using isotropic and anisotropic properties of the die are carried out, respectively, and the results are compared. Creep experiments were performed at different temperatures ranging from −65°C to 230°C to obtain the long-term master curves and the related shift factors for the creep compliance of the molding compound. FE models which incorporate the viscoelastic constitutive relation of the material are constructed to simulate the thermo-mechanical stresses caused by the packaging processes. The influences of both the chip anisotropy and the viscoelastic behavior of the molding compound on the packaging induced stresses are discussed.

Publisher

ASME International

Subject

Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Reference13 articles.

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2. Nikanorov, S. P., Burenkov, Yu. A., and Stepanov, A. V., 1972, “Elastic Properties of Silicon,” Sov. Phys. Solid State, 13, pp. 2516–2579.

3. George, A., 1999, “Elastic Constants and Moduli of Diamond Cubic Si,” in Properties of Crystalline Silicon, edited by R. Hull, Inspec Publishing, London.

4. Maissel, L. , 1960, “Thermal Expansion of Silicon,” J. Appl. Phys., 31, pp. 211–214.

5. Ibach, H. , 1969, “Thermal Expansion of Silicon and Zinc Oxide,” Phys. Status Solidi, 31, pp. 625–634.

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