Transient Temperature During Pulsed Excimer Laser Heating of Thin Polysilicon Films Obtained by Optical Reflectivity Measurement-Reference-Cited by-同舟云学术

Transient Temperature During Pulsed Excimer Laser Heating of Thin Polysilicon Films Obtained by Optical Reflectivity Measurement

Published:1995-02-01 Issue:1 Volume:117 Page:17-24
ISSN:0022-1481
Container-title:Journal of Heat Transfer
language:en
Short-container-title:

Author:

Xu X.¹,Grigoropoulos C. P.¹,Russo R. E.²

Affiliation:

1. Department of Mechanical Engineering, University of California, Berkeley, CA 94720

2. Energy and Environment Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720

Abstract

The transient reflectivity of a continuous wave (CW) HeNe laser was measured during the pulsed excimer laser heating of thin polysilicon films at the nanosecond time scale. Polysilicon films with thicknesses from 0.1 to 0.4 μm were deposited by Low-Pressure Chemical Vapor Deposition (LPCVD) on thermally oxidized crystalline silicon wafers. The complex refractive index of these films at the HeNe laser wavelength (λprobe = 0.6328 μm) was measured in the temperature range from 300 K to approximately 1400 K by combined ellipsometric and normal incidence reflectivity measurements. Numerical heat transfer and optical reflectivity analysis based on the measured optical properties of polysilicon films were conducted. The calculated reflectivity histories were compared with the experimental results to reveal the transient temperature field.

Publisher

ASME International

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://asmedigitalcollection.asme.org/heattransfer/article-pdf/117/1/17/5788920/17_1.pdf

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