Formation of Silicon Carbide in the Surface Layer of Metals by Dual High Energy Ion Implantation
Author:
Affiliation:
1. The Tokyo Metropolitan Industrial Technology Research Institute
2. Tokyo Metropolitan University
Publisher
Japan Institute of Metals
Subject
General Engineering
Link
https://www.jstage.jst.go.jp/article/matertrans1989/40/5/40_5_428/_pdf
Reference13 articles.
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2. 2) D. C. Kothari, M. R. Nair, A. A. Rangwala, K. B. Lal, P. D. Prabhawalkar and P. M. Raole: Nucl. Instr. and Meth., B7/8 (1985), 235.
3. 3) O. Nishimura, K. Yabe, K. Saito, T. Yamashina and M. Iwaki: Surf. Coat. Technol., 66 (1994), 403.
4. 4) D. M. Follstaedt, J. A. Knapp and L. E. Pope: Nucl. Instr. and Meth., B42 (1989), 205.
5. 5) J. I. Onata, F. Alonso, J. L. Viviente and A. Arizaga: Surf. Coat. Technol., 65 (1994), 165.
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1. Characterization of mechanical properties and microstructure of high-energy dual ion implanted metals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
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