Room-Temperature Wafer Bonding for High-Heat Dissipation Structure in High-Power Semiconductor Devices
Author:
Affiliation:
1. Department of Precision Engineering, School of Engineering, The University of Tokyo
Publisher
Japan Institute of Electronics Packaging
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/jiep/18/7/18_463/_pdf
Reference19 articles.
1. 1) J. V. Sandusky and S. R. J. Brueck: “A CW external-cavity surface-emitting laser,” IEEE Photonics Technology Letters, Vol. 8, No. 3, pp. 313-315, 1996
2. 2) M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian: “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonics Technology Letters, Vol. 9, No. 8, pp. 1063-1065, 1997
3. 3) O. Ueda: “Reliability and Degradation of III-V Optical Devices,” Artech House, 1996
4. 4) New Semiconductor Materials, Characteristics and Properties [www.ioffe.ru/SVA/NSM/]
5. 5) MatWeb [www.matweb.com]
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