Author:
Lang Fengqun,Yamaguchi Hiroshi,Nakagawa Hiroshi,Sato Hiroshi
Publisher
Japan Institute of Electronics Packaging
Subject
Electrical and Electronic Engineering
Reference21 articles.
1. 1) K. Shenai: “High-Power Robust Semiconductor Electronics Technologies in the New Millennium,” Microelectron. J., Vol. 32, No. 5–6, pp. 397–408, 2001
2. 2) J. Richmond, S. Hodge, and J. Palmour: “Silicon Carbide Power Applications and Device Roadmap,” Power Electron Europe, No. 7, pp. 17–21, 2004
3. 4) R. Normann: “Synoposis: Report on High Temperature Tools Technology Needs from the International Partnership for Geothermal Technology,” Proc. the International Conference and Exhibition on High Temperature Electronics Network (HiTEN2011), pp.68–76, 2011
4. 5) M. Yamashita and K. Suganuma: “Improvement in High-Temperature Degradation by Isotropic Conductive Adhesives Including Ag–Sn Alloy Fillers,” Microelectro. Reliab. 46, Vol. 5–6, pp. 850–858, 2006
5. 6) M. F. Sousa, S. Riches, C. Johnson, and P. S. Grant: “Optimizing the Performance of the Au–Si System for High Temperature Die Attach Applications,” Proc. International Conference and Exhibition on High Temperature Electronics Network (HiTEN2011), pp. 68–76, 2011
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