Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga<sub>2</sub>O<sub>3</sub> thin films fabricated by mist chemical vapor deposition-Reference-Cited by-同舟云学术

Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga₂O₃ thin films fabricated by mist chemical vapor deposition

Published:2018-11-01 Issue:11 Volume:126 Page:925-930
ISSN:1348-6535
Container-title:Journal of the Ceramic Society of Japan
language:en
Short-container-title:J. Ceram. Soc. Japan

Author:

NAKABAYASHI Yuji¹,YAMADA Satoru²,ITOH Satoshi³,KAWAE Takeshi³

Affiliation:

1. Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology

2. Department of Electrical Engineering, National Institute of Technology, Ishikawa College

3. Graduate School of Natural Science and Technology, Kanazawa University

Publisher

Ceramic Society of Japan

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry,Ceramics and Composites

Link

https://www.jstage.jst.go.jp/article/jcersj2/126/11/126_18082/_pdf

Reference32 articles.

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3. 3) S. Fujita, Jpn. J. Appl. Phys., 54, 030101 (2015).

4. 4) J. Millán, P. Godignon, X. Perpiñà, A. Pérez-Tomás and J. Rebollo, IEEE Trans. Power Electron., 29, 2155 (2014).

5. 5) H. Okumura, Jpn. J. Appl. Phys., 45, 7565–7586 (2006).

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