Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with different abrasives-Reference-Cited by-同舟云学术

Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with different abrasives

Published:2014-05-11 Issue:10 Volume:228 Page:1144-1150
ISSN:1350-6501
Container-title:Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology
language:en
Short-container-title:Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology

Author:

Zou Chunli¹²,Pan Guoshun¹²,Shi Xiaolei¹²,Gong Hua¹²,Zhou Yan¹²

Affiliation:

1. State Key Laboratory of Tribology, Tsinghua University, Beijing, PR China

2. Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen, PR China

Abstract

For chemical-mechanical polishing of epitaxial gallium nitride (GaN), a two-step experiment method with two kinds of abrasives, aluminum oxide (Al2O3) and colloidal silica (SiO2), was put forward. The average material removal rates of GaN by the slurry with Al2O3 and SiO2 abrasives were 594.79 and 66.88 nm/h, respectively. An atomically flat surface with roughness (Ra) of 0.056 nm was obtained after the second chemical-mechanical polishing process with SiO2-based slurry, which presented an atomic step-terrace structure. The material removal characteristics of GaN surfaces were investigated in detail. A model was proposed to describe the different behaviors of the two kinds of abrasive during chemical-mechanical polishing process.

Publisher

SAGE Publications

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanical Engineering

Link

http://journals.sagepub.com/doi/pdf/10.1177/1350650114535383

Reference18 articles.

1. Atomically Smooth Gallium Nitride Surfaces Prepared by Chemical Etching with Platinum Catalyst in Water

2. Wet etching of GaN, AlN, and SiC: a review

3. Chemical Mechanical Polishing of GaN

4. Chemical Mechanical Polishing of Gallium Nitride with Colloidal Silica

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