The Overview and Future Prospects for Planarization CMP Technology

Author:

KUROKAWA Syuhei

Publisher

Japan Society for Precision Engineering

Subject

Mechanical Engineering

Reference4 articles.

1. 11) C. Wang, S. Kurokawa, T. Doi et al. : The Polishing Effect of SiC Substrates in Femtosecond Laser Irradiation Assisted Chemical Mechanical Polishing (CMP), ECS Journal of Solid State Science and Technology, 6, 4 (2017) P 105.

2. 16) K. Amagai, K. Kakegawa et al. : Observation and Modeling of Liquid Film Flow on Rotating Disk for CMP Cleaning Process, Proc. of the Int. Conf. on Planarization/CMP Technology, ICPT2015 (2015) 209.

3. 19) A. Isobe, M. Akaji and S. Kurokawa : Proposal of New Polishing Mechanism Based on Feret's Diameter of Contact Area between Polishing Pad and Wafer, Japanese Journal of Applied Physics, 52, 12 (2013) 126503-1.

4. 20) M. Kitamura, S. Kurokawa, Y. Tokumoto et al. : Proposal of Cleanliness Evaluation Method of CMP Pad and Investigation of Cleaning Effect by the High-Pressure Jet, Proc. of the Int. Conf. on Planarization/CMP Technology, ICPT2015 (2015) 24.

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