Numerical Analysis of Self-Heating Effect in HEMT Transistors-Reference-Cited by-同舟云学术

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Numerical Analysis of Self-Heating Effect in HEMT Transistors

Published:2023-12-30 Issue: Volume:46 Page:1-5
ISSN:
Container-title:2023 International Conference on Electrical, Communication and Computer Engineering (ICECCE)
language:
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Author:

Nasri Faouzi¹,Mzoughi Haikel²,Salama Husien³,Salama Khalifa Ahmed⁴

Affiliation:

1. Center for Research in Microelectronics and Nanotechnology,Sousse,Tunisia

2. Laboratory of Thermal Process Research and Technology of Energy,Tunis,Tunisia

3. Computer System Institute,Boston,USA

4. Libyan Center for Enginnering Research and Information Technology,Bani Walid,Libya

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10441786/10441790/10442598.pdf?arnumber=10442598

Reference12 articles.

1. A Reliable Model Parameter Extraction Method Applied to AlGaN/GaN HEMTs

2. Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures

3. Dual material gate field effect transistor (DMGFET)

4. Dual-material gate (DMG) field effect transistor

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