A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory With a Sensing Current Protection Technique-Reference-Cited by-同舟云学术

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A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory With a Sensing Current Protection Technique

Published:2014-10 Issue:10 Volume:61 Page:2862-2868
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Zhang Shengbo,Xiao Jun,Yang Guangjun,Hu Jian,Huang Mingyong,Zou Shichang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8919/6910335/06822648.pdf?arnumber=6822648

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Wide-Range-Supply-Voltage Sense Amplifier Circuit for Embedded Flash Memory;IEEE Transactions on Circuits and Systems II: Express Briefs;2020-08

2. Offset‐cancelling current‐mode sense amplifier for fast‐read eFlash memory;Electronics Letters;2019-04

3. A 280-KBytes Twin-Bit-Cell Embedded NOR Flash Memory With a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems;IEEE Transactions on Circuits and Systems II: Express Briefs;2018-11

4. Embedded Flash and EEPROM for Smart IoT;Memories for the Intelligent Internet of Things;2018-04-20

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