Addressing Failure and Aging Degradation in MRAM/MeRAM-on-FDSOI Integration-Reference-Cited by-同舟云学术

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Addressing Failure and Aging Degradation in MRAM/MeRAM-on-FDSOI Integration

Published:2019-01 Issue:1 Volume:66 Page:239-250
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Cai Hao^ORCID,Wang You^ORCID,de Barros Naviner Lirida Alves,Liu Xinning,Shan Weiwei^ORCID,Yang Jun^ORCID,Zhao Weisheng^ORCID

Funder

National Science and Technology Major Project

Southeast University

Beijing Municipal of Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8919/8566198/08439066.pdf?arnumber=8439066

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Sensing Margin Sensing Amplifier with Improved Reliability for STT-MRAM;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

2. Impact on Radiation Robustness of Gate Mapping in FinFET Circuits under Work-function Fluctuation;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21

3. Novel multi-bit parallel pipeline-circuit design for STT-MRAM;AIP Advances;2023-02-01

4. A survey of in-spin transfer torque MRAM computing;Science China Information Sciences;2021-05-10

5. Area and Energy Efficient Joint 2T SOT-MRAM based on diffusion region sharing with Adjacent cells;IEEE Transactions on Circuits and Systems II: Express Briefs;2021

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