ReRAM Technologies for Embedded Memory and Further Applications

Author:

Ito Satoru,Hayakawa Yukio,Wei Zhiqiang,Muraoka Shunsaku,Kawashima Koichi,Kotani Hideto,Kouno Kazuyuki,Nakamura Masayoshi,Du Guo An,Chen Jiann Fu,Yeoh Stanley PL,Chen Mars HY,Mikawa Takumi,Yoneda Shinichi

Publisher

IEEE

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Event-Driven Stochastic Compact Model for Resistive Switching Devices;IEEE Transactions on Electron Devices;2024-08

2. Optimizing RRAM Performance: A Comparative Analysis of Forming Strategies;2024 IEEE International Memory Workshop (IMW);2024-05-12

3. Integration of Memristive Devices into a 130 nm CMOS Baseline Technology;Springer Series on Bio- and Neurosystems;2023-09-20

4. A TCAD Model for Silicon Nitride Based Memristive Devices;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

5. RRAM Device Performances Under Capacitive-Enhanced Current Programming Scheme;IEEE Electron Device Letters;2023-07

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