The effects of doping, gate length, and gate dielectric on inverse subthreshold slope and on/off current ratio of a top gate silicon nanowire transistor-Reference-Cited by-同舟云学术

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The effects of doping, gate length, and gate dielectric on inverse subthreshold slope and on/off current ratio of a top gate silicon nanowire transistor

Published:2008 Issue: Volume: Page:
ISSN:
Container-title:2008 International Conference on Electrical and Computer Engineering
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Author:

Bhowmick Sishir,Alam Khairul,Quazi Deen Mohd Khosru

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4753886/4769162/04769216.pdf?arnumber=4769216

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1. Performance Analysis of Silicon Nanowire FET for GAA and Pi Gate Configurations;2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO);2022-04-28

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