24.3 A 236-to-266GHz 4-Element Amplifier-Last Phased-Array Transmitter in 65nm CMOS-Reference-Cited by-同舟云学术

24.3 A 236-to-266GHz 4-Element Amplifier-Last Phased-Array Transmitter in 65nm CMOS

Published:2024-02-18 Issue: Volume: Page:415-417
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Container-title:2024 IEEE International Solid-State Circuits Conference (ISSCC)
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Author:

Wang Chun¹,Herdian Hans¹,Zheng Wenbin¹,Liu Chenxin¹,Mayeda Jill¹,Liu Yuxuan¹,Yong Olivia Angel¹,Wang Wenqian¹,Zhang Yuncheng¹,Gomez Carrel Da¹,Shehata Abanob¹,Kato Sena¹,Abdo Ibrahim²,Jyo Teruo²,Hamada Hiroshi²,Takahashi Hiroyuki²,Sakai Hiroyuki¹,Shirane Atsushi¹,Okada Kenichi¹

Affiliation:

1. Tokyo Institute of Technology,Tokyo,Japan

2. Nippon Telegraph and Telephone,Tokyo,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10454133/10454267/10454273.pdf?arnumber=10454273

Reference7 articles.

1. A 240 GHz Fully Integrated Wideband QPSK Transmitter in 65 nm CMOS

2. 17.9 A 105Gb/s 300GHz CMOS transmitter

3. A 300GHz Wireless Transceiver in 65nm CMOS for IEEE802.15.3d Using Push-Push Subharmonic Mixer

4. A 390-GHz Outphasing Transmitter in 28-nm CMOS

5. Dual-Layer Proton Irradiation for Creating Thermally-Stable High-Resistivity Region in Si CMOS Substrate

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