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Experimental and Numerical Analysis of p-Electrode Patterns on the Lateral GaN-Based LEDs

  • Published:2014-08-01 Issue:15 Volume:32 Page:2643-2648
  • ISSN:0733-8724
  • Container-title:Journal of Lightwave Technology
  • language:
  • Short-container-title:J. Lightwave Technol.

Author:

Lee Yeeu-Chang,Hwu Farn-Shiun,Yang Ming-Chieh,Lin Cheng-Yi

Funder

Chung Yuan Christian University of Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of thermal performance and vibration effects on automotive headlights for selection of heat sink geometry;Journal of Thermal Analysis and Calorimetry;2024-05-06

2. Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer;ECS Journal of Solid State Science and Technology;2023-09-01

3. Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO2) Layers;ECS Journal of Solid State Science and Technology;2022-07-01

4. Optimization of P/N discontinuous ohmic contact LED;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06

5. Study of a GaN-Based Light-Emitting Diode With a Ga₂O₃ Current Blocking Layer and a Ga₂O₃ Surface Passivation Layer;IEEE Transactions on Electron Devices;2021-08
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