RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using $(\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As})_{m}/(\hbox{InAs})_{n}$ Superlattice-Channel Structure for Millimeter-Wave Applications-Reference-Cited by-同舟云学术

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RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using $(\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As})_{m}/(\hbox{InAs})_{n}$ Superlattice-Channel Structure for Millimeter-Wave Applications

Published:2010-07 Issue:7 Volume:31 Page:677-679
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chien-I Kuo ,Heng-Tung Hsu ,Yu-Lin Chen ,Chien-Ying Wu ,Chang Edward Yi,Miyamoto Yasuyuki,Wen-Chung Tsern ,Sahoo Kartik Chandra

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5492327/05471190.pdf?arnumber=5471190

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review;Microelectronics Journal;2019-10

2. 20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications;International Journal of Electronics;2016-08-17

3. 20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications;Journal of Computational Electronics;2016-08-16

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