Behavior of Tungsten Carbide thin Films Grown at Different Substrate Temperatures-Reference-Cited by-同舟云学术

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Behavior of Tungsten Carbide thin Films Grown at Different Substrate Temperatures

Published:2022-10-20 Issue: Volume: Page:
ISSN:
Container-title:2022 International Conference on Electrical Engineering and Photonics (EExPolytech)
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Author:

Bist Shristi¹,Pandey Ratnesh K.¹,Shah Sejal²,Mangababu A.³,Kalita Parswajit¹,Chawla Amit¹,Avasthi Devesh Kumar⁴

Affiliation:

1. School of Engineering, University of Petroleum and Energy Studies,Department of Physics,Dehradun,Uttarakhand,India,248007

2. ITER India Institute for Plasma Research,Ahemdabad,Gujarat,India,380005

3. School of Physics, University of Hyderabad,Hyderabad,Telangana,India,500046

4. Centre for Interdisciplinary Research and Innovation, University of Petroleum and Energy Studies,Dehradun,Uttarakhand,India,248007

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9950734/9950738/09951001.pdf?arnumber=9951001

Reference22 articles.

1. Growth mechanisms of WC in WC–5.75wt% Co

2. Cemented carbide microstructures: a review

3. Tungsten-based material as promising new lead-free gamma radiation shielding material in nuclear medicine

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of substrate temperature on the structural properties of Tungsten Carbide and Tungsten-rich Tungsten Carbide films;Radiation Effects and Defects in Solids;2024-07-03

2. Investigation of W-SiC compositionally graded films as a divertor material;Journal of Nuclear Materials;2024-04

3. Swift heavy ion irradiation effects on tungsten carbide films;Journal of Alloys and Compounds;2024-03

4. Swift Heavy Ion Irradiation Effects on Tungsten Carbide Films;2023

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