Impact of BEOL stress on BiCMOS9MW HBTs-Reference-Cited by-同舟云学术

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Impact of BEOL stress on BiCMOS9MW HBTs

Published:2013-09 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
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Author:

Canderle E.,Chevalier P.,Avenier G.,Derrier N.,Celi D.,Gaquiere C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6782753/6798123/06798181.pdf?arnumber=6798181

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Test Structures for studying the impact of the backend contact metallization on the performance and stress sensitivity of SiGe HBTs;2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS);2024-04-15

2. Assessing DC and RF Reliability of SiGe HBTs Stress-Engineered Using Dummy BEOL Layers;IEEE Transactions on Electron Devices;2024

3. Improved Electrical Reliability and Performance Enhancements in SiGe HBTs Using Dummy BEOL Metal Layers;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

4. Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress;IEEE Transactions on Electron Devices;2022-09

5. Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser;Journal of Computational Electronics;2022-07-16

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