Dielectric based antifuse for logic and memory ICs-Reference-Cited by-同舟云学术

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Dielectric based antifuse for logic and memory ICs

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Container-title:Technical Digest., International Electron Devices Meeting
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Author:

Hamdy E.,McCollum J.,Chen S.-O.,Chiang S.,Eltoukhy S.,Chang J.,Speers T.,Mohsen A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/713/1415/00032929.pdf?arnumber=32929

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs;Nuclear Science and Techniques;2019-04-13

2. Effects of Electrode on the Performance of Al2O3Based Metal-Insulator-Metal Antifuse;ECS Journal of Solid State Science and Technology;2019

3. A new high-κ Al 2 O 3 based metal-insulator-metal antifuse;Solid-State Electronics;2018-06

4. Role of Ti Electrode on the Electrical Characterization of Filament within Al2O3Based Antifuse;ECS Journal of Solid State Science and Technology;2018

5. A High Reliable High-κ Antifuse Programmed by Intrinsic Overshoot Current;ECS Journal of Solid State Science and Technology;2018

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