Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers-Reference-Cited by-同舟云学术

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Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers

Published:2020-07-20 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Fujii Shuntaro,Takeuchi Hideki,Morita Soichi,Yagi Tatsushi,Hamada Shohei,Sakamoto Toshiro,Kawaguchi Shinji,Ishigami Naoki,Okamoto Atsushi,Ikeda Shuji,Wong Hiu-Yung,Mears Robert J.,Miyazaki Tsutomu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9260488/9260588/09260584.pdf?arnumber=9260584

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of Low Frequency Noise of Buried Channel PMOSFETs With Retrograde Counter Doping Profiles;IEEE Journal of the Electron Devices Society;2024

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