Measurement results of packaged millimeter-wave silicon IMPATT diodes-Reference-Cited by-同舟云学术

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Measurement results of packaged millimeter-wave silicon IMPATT diodes

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Container-title:Twenty Seventh International Conference on Infrared and Millimeter Waves
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Author:

Luschas M.,Judaschke R.,Luy J.-F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8133/22927/01076121.pdf?arnumber=1076121

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On Some Modern Simulation Techniques for Studying THz ATT Sources;Lecture Notes in Electrical Engineering;2021-09-22

2. Cutting-Edge Technologies for Terahertz Wave Generation: A Brief History from the Inception Till the Present State of The Art;Lecture Notes in Electrical Engineering;2021-09-22

3. Relative Study on MM-Wave Performance of Group IV-IV and Group III-V Materials Based IMPATT Sources;IETE Journal of Research;2020-07-16

4. Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions;Journal of Computational Electronics;2016-02-23

5. Potentiality of IMPATT Devices as Terahertz Source: An Avalanche Response Time-based Approach to Determine the Upper Cut-off Frequency Limits;IETE Journal of Research;2013

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