Application of a Smart Gate Driver to Detect Aging in SiC Power MOSFETs
Author:
Affiliation:
1. University of Toronto,The Edward S. Rogers Sr. Dept. of Electrical & Computer Engineering,Toronto,Canada
2. Fuji Electric Co. Ltd.,Development Div. Electronic Device, Business Group,Device Development Dept.,Matsumoto,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147513.pdf?arnumber=10147513
Reference6 articles.
1. SiC MOSFET Aging Detection Based on Miller Plateau Voltage Sensing
2. Review and analysis of SiC MOSFETs’ ruggedness and reliability
3. A Smart Gate Driver for SiC Power MOSFETs with Aging Compensation and Ringing Suppression
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide Health: A Dual-Channel Gate Driving Approach;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
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