In-Situ Extraction of the Thermal Impedance of GaN Power HEMTs Embedded in PCB-based Power Circuits
Author:
Affiliation:
1. University Federico II,Department of Electrical Engineering and Information Technology,Naples,Italy
2. Politecnico di Milano,Department of Electronics, Information and Bioengineering,Milan,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147598.pdf?arnumber=10147598
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4. A Technique for the In-Situ Experimental Extraction of the Thermal Impedance of Power Devices
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1. Influence of Parasitic Capacitances and Inductances in a Power Electronic Converter on Junction Temperature of Power GaN HEMTs;2024 31st International Conference on Mixed Design of Integrated Circuits and System (MIXDES);2024-06-27
2. Selecting Temperature Sensitive Parameter for a Transient Thermal Impedance Measurements of E-Mode Power GaN HEMT;2024 IEEE 18th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG);2024-06-24
3. Reliability tests of the surface-mounted power MOSFETs soldered using SAC0307-TiO2 composite solder paste;2023 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC);2023-09-27
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