0.18µm 200V SOI-BCD Technology with Ultra-Low Specific On-Resistance LDMOS for Automotive Application-Reference-Cited by-同舟云学术

0.18µm 200V SOI-BCD Technology with Ultra-Low Specific On-Resistance LDMOS for Automotive Application

Published:2023-05-28 Issue: Volume: Page:
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Container-title:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Lu Li¹,Ma Shulang²,Xiao Jinyu²,Lin Feng²,Chen Shuxian²,Shao Hong²,Zhang Sen²,Xiao Kui²,Dai Yixin¹,Zhu Zhihan¹,Ma Jia¹,Wei Jiaxing¹,Zhang Long¹,Liu Siyang¹,Sun Weifeng¹

Affiliation:

1. National ASIC System Engineering Research Center, Southeast University,Nanjing,China

2. CSMC Technologies Corporation,Wuxi,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147740.pdf?arnumber=10147740

Reference7 articles.

1. Wide-Votage SOI-BiCMOS Technology for High-Temperature Automotive Applications;tomita;ISPSD,2011

2. A Cost Effective and Highly Manufacturable Approach to Extend a BCD 70V Technology to 200V

3. An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process;qiao;ISPSD,2022

4. 40V to 100V NLDMOS Built on Thin BOX SOI with High Energy Capability, State of the Art Rdson/BV dss and Robust Performance;hao;ISPSD,2018

5. Patial SOI as a HV Platform Technology for Power Integrated Circuits;hölke;ISPSD,2020

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